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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
DRAWING
9.1+/-0.7 1.3+/-0.4 3.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.
OUTLINE
3.2+/-0.4
12.3MIN
High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band
4.8MAX
9+/-0.4
FEATURES
12.3+/-0.6
2
1.2+/-0.4 0.8+0.10/-0.15
123
APPLICATION
3.1+/-0.6
5deg
4.5+/-0.5
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.5+0.10/-0.15 2.5 2.5
RoHS COMPLIANT
9.5MAX
note: RD15HVF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter "G" after the lot Dimension in mm. marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
PINS 1:GATE 2:SOURCE 3:DRAIN
RD15HVF1
MITSUBISHI ELECTRIC 1/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
UNIT V V W
W A C C C/W
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6
Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout1 D1 Pout2 D2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.6W, f=175MHz,Idq=0.5A VDD=12.5V, Pin=3W, f=520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.5 15 55 15 50 LIMITS TYP MAX. 100 1 2.0 2.5 18 60 18 55 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD15HVF1
MITSUBISHI ELECTRIC 2/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
100 CHANNEL DISSIPATION Pch(W) 80
40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
60
0
2
4 6 Vgs(V)
8
10
Vds-Ids CHARACTERISTICS 10
Ta=+25C
Vds VS. Ciss CHARACTERISTICS 80
Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Ta=+25C f=1MHz
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
60 Ciss(pF) 40 20 0 0 5 10 Vds(V) 15 20
Ids(A)
Vgs=4V Vgs=3V
Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD15HVF1
MITSUBISHI ELECTRIC 3/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
Pin-Po CHARACTERISTICS 25
Po
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 40 30
Gp Ta=+25C f=175MHz Vdd=12.5V Idq=0.5A
100
Po
100 80
d
Po(dBm) , Gp(dB) , Idd(A)
80 Pout(W) , Idd(A) 60 40 20 0
20 15 10 5 0 0.0
Ta=25C f=175MHz Vdd=12.5V Idq=0.5A Idd
d(%)
20 10 0 0 10 20 Pin(dBm) 30
40 20 0
0.5 Pin(W)
1.0
1.5
Pin-Po CHARACTERISTICS 50 40 30 20
Gp Ta=+25C f=520MHz Vdd=12.5V Idq=0.5A
Pin-Po CHARACTERISTICS 100 25 20
d
100 80 60
Po Ta=25C f=520MHz Vdd=12.5V Idq=0.5A
Po
Po(dBm) , Gp(dB) , Idd(A)
80 60 40 20 0 Pout(W) , Idd(A)
d(%)
10 5 0 0 1 2 3 Pin(W) 4
40 20 0
10 0 0 10 20 Pin(dBm) 30 40
Idd
5
6
Vdd-Po CHARACTERISTICS 25 20 15
Idd Ta=25C f=175MHz Pin=0.6W Idq=0.5A Zg=ZI=50 ohm Po
Vdd-Po CHARACTERISTICS 5 4 3 2 1 0 25 20 15
Idd Ta=25C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm
5 4 3 2 1 0 4 6 8 10 Vdd(V) 12 14
Po
Idd(A)
Po(W)
10 5 0 4 6 8 10 Vdd(V) 12 14
Po(W)
10 5 0
RD15HVF1
MITSUBISHI ELECTRIC 4/9
7 Mar 2008
Idd(A)
d(%)
15
d(%)
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2 10 8 6
+75C Vds=10V Tc=-25~+75C -25C +25C
Ids(A)
4 2 0 0 2 4 6 Vgs(V) 8 10
TEST CIRCUIT(f=175MHz)
Vgg C1 Vdd
9.1kOHM L3
C3
8.2kOHM
100OHM C2 L1 175MHz RD15HVF1 L2
RF-IN 56pF 56pF
RF-OUT 82pF 25pF 25pF
25pF 25pF 25pF 22 45 62 73 92 100
7
10pF 25pF 25pF 7 12 40 42 74 95 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD15HVF1
MITSUBISHI ELECTRIC 5/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TEST CIRCUIT(f=520MHz)
Vgg C1 9.1kOHM L3
C3
8.2kOHM
100OHM 10pF L1 15pF L2 RF-OUT 56pF 12pF 5pF C2 520MHz RD15HVF1
RF-IN 56pF
7 90 100
7 90 100
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
RD15HVF1
MITSUBISHI ELECTRIC 6/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zout
f=520MHz Zin
f=175MHz Zout
Zo=50ohm
f=175MHz Zin
Zin , Zout f (MHz)
175 520
Zin (ohm)
2.34-j8.01 5.42+j9.22
Zout (ohm)
3.06+j0.74 6.02+j12.34
Conditions Po=15W, Vdd=12.5V,Pin=0.6W Po=15W, Vdd=12.5V,Pin=3.0W
RD15HVF1
MITSUBISHI ELECTRIC 7/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
S12 S22 (ang) 26.0 27.7 36.1 41.8 48.1 57.7 65.3 70.3 73.5 74.6 73.9 73.9 72.6 62.8 59.6 57.8 54.8 51.4 49.4 (mag) 0.556 0.547 0.560 0.571 0.588 0.625 0.647 0.683 0.716 0.734 0.765 0.777 0.788 0.859 0.870 0.877 0.880 0.886 0.892 (ang) -130.2 -150.4 -157.8 -160.1 -161.8 -164.3 -167.5 -170.9 -173.7 -176.8 179.4 178.0 176.3 159.0 155.7 152.4 149.0 145.7 142.1 (mag) 0.023 0.024 0.025 0.025 0.026 0.030 0.036 0.044 0.053 0.062 0.072 0.076 0.082 0.135 0.143 0.153 0.163 0.170 0.178
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 800 850 900 950 1000 1050 S11 (mag) 0.717 0.726 0.744 0.748 0.755 0.770 0.787 0.804 0.821 0.838 0.849 0.854 0.862 0.900 0.904 0.909 0.910 0.910 0.911 (ang) -145.9 -163.9 -171.1 -173.6 -175.9 -179.0 177.6 174.6 171.2 168.2 165.1 163.7 161.7 145.0 141.3 137.9 134.6 131.2 127.5 (mag) 23.274 12.054 8.049 6.804 5.886 4.622 3.731 3.092 2.623 2.229 1.938 1.845 1.695 0.971 0.864 0.790 0.738 0.662 0.612 S21 (ang) 101.8 85.7 74.7 70.2 66.3 58.6 51.5 45.3 39.1 33.2 28.3 26.1 22.9 4.2 0.0 -1.4 -4.4 -6.8 -8.4
RD15HVF1
MITSUBISHI ELECTRIC 8/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD15HVF1
MITSUBISHI ELECTRIC 9/9
7 Mar 2008

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